| PART |
Description |
Maker |
| BS108 ON0217 |
200 VOLTS N-CHANNEL TMOS POWER FET LOGIC LEVEL
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| MTD20P03 MTD20P03HDL MTD20P03HDL_D ON2488 |
TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
From old datasheet system
|
Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| PHD16N03LT |
N-channel TrenchMOS?/a> logic level FET
N-channel Trenchmos (tm) logic level FET
N-channel TrenchMOS⑩ logic level FET
From old datasheet system
N-channel TrenchMOSlogic level FET 16 A, 30 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MMFT2406T1 MMFT2406T MMFT2406T1_D ON2217 |
MEDIUM POWER TMOS FET 700 mA 240 VOLTS 0.7 A, 240 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MMFT3055E_D ON2223 MMFT3055E-D |
Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount
From old datasheet system
N-hannel Enhancement-ode Logic Level SOT23
|
ON Semiconductor
|
| MTD12N06EZL_D ON2462 MTD12N06EZL-D |
TMOS E-FET High Energy Power FET DPAK for Surface Mount or Insertion Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS
|
ON Semiconductor
|
| MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor
Motorola, Inc
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
